Job Id: 1112
Lead the design and development efforts for proprietary next generation GaN based UV/VIS laser-technology for use in the Industrial, Display, AR/VR, Automotive, General lighting and Biotech markets.
Oversee all technical aspects of design and development of next generation GaN Diode Lasers that leverage the advantages of proprietary Remote Plasma CVD (RPCVD) deposition technology and corresponding process advantages.
- Degree in Electrical Engineering, Physics or Materials Science with advanced degree preferred.
- Experience in GaN based Laser/Laser Diode environment.
- Experience in design & development and integration of discrete laser diode components such as FP, DFB/ DBR or VCSEL, including prior research and publication.
- Experience in Gallium Nitride materials systems (design/modeling, epitaxy, fabrication or testing) is highly desirable.
Company Specialties: RPCVD, Custom Epitaxy, LEDs, Laser Diodes, Power electronics, GaN, Contract R&D, MOCVD, InGaN Solar, and microLEDs
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